Associate Professor Tsung-Ming Tsai

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Eng_蔡宗鳴_Tsung-Ming Tsai

Associate Professor Tsung-Ming Tsai

tmtsai AT mail.nsysu.edu.tw
07-5252-000 ext:4055
Education: Ph.D., Department of Electronics Engineering, National Chiao Tung University
Office: Building of Materials, MS3013
Lab: MS2020
Discipline: Electronics, Experiments on Material Characterization and Optoelectronics, Semiconductor Device, Memory Devices and their Fabrication Technologies

Speciality

Integrated circuit technology, Advanced BEOL technology, Semiconductor device physics, Flash memory technology, Semiconductor nano device, Microelectronics

2000/09 - 2005/01

Ph.D., Department of Electronics Engineering
National Chiao Tung University, Taiwan.

1998/09 - 2000/06

MS., Institute of Electronics Engineering
National Tsing Hua University, Taiwan.

1994/09 - 1998/06

BS., Department of Electrical Engineering
National Chung Hsing University, Taiwan.

2005/04 - 2008/01

主任工程師
力晶半導體股份有限公司研究技術整合部

年度	計畫名稱	擔任工作	機構	補助類別
108	具有可調能隙氧化鎂鋅材料之太陽光盲紫外光感測器製作與電性分析	計畫主持人	科技部	雙邊協議專案型國際合作研究計畫
108	開發高性能/高可靠度前瞻電阻式記憶元件及物理機制研究	計畫主持人	科技部	一般研究計畫
108	元件電性量測與製程技術合作研發聯盟(第二期)(3/3)	計畫主持人	科技部	產學技術聯盟合作計畫
107	應用於電子元件改質之新穎超臨界流體處理技術開發	計畫主持人	科技部	一般研究計畫
107	元件電性量測與製程技術合作研發聯盟(第二期)(2/3)	共同主持人	科技部	產學技術聯盟合作計畫

T. J. Chu, T. M. Tsai, T. C. Chang, K. C. Chang, C. H. Pan, K. H. Chen, J. H. Chen, H. L. Chen, H. C. Huang, C. C. Shih, Y. E. Syu, J. C. Zheng, S. M. Sze, "Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory", Appl. Phys. Lett., VOL. 105, 223514 (2014).
H. R. Chen, Y. C. Chen, T. C. Chang, K. C. Chang, T. M. Tsai, T. J. Chu, C. C. Shih, Y. T. Tseng, C. Y. Lin, H. C. Lin, "The Manipulation of Temperature Coefficient Resistance of TaN Thin-Film Resistor by Supercritical CO2 Fluid", IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 3, (2015) 271-273.
X. Huang, K. C. Chang, T. C. Chang, T. M. Tsai, C. C. Shih, R. Zhang, S. Y. Huang, K. H. Chen, J. H. Chen, H. J. Wang, W. J. Chen, F. Zhang, C. Chen, S. M. Sze, "Controllable Set Voltage in Bilayer ZnO:SiO2/ZnOx Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation", IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 12, (2015) 1227-1229
Y. J. Chen, K. C. Chang, T. C. Chang, H. L. Chen, T. F. Young, T. M. Tsai, R. Zhang, T. J. Chu, J. F. Ciou, J. C. Lou, K. H. Chen, J. H. Chen, J. C. Zheng, S. M. Sze, "Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor", IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 10, October (2014) 1016-1018
G. W. Chang, T. C. Chang, J. C. Chu, T. M. Tsai, K. C. Chang, Y. E. Syu, Y. H. Tai, F. Y. Jian, Y. C. Hung, "Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors", IEEE Trans. Electron Devices, VOL. 61, NO. 6, JUNE(2014) 2119-2124
H. L. Chen, T. C. Chang, T. F. Young, T. M. Tsai, K. C. Chang, R. Zhang, S. Y. Huang, K. H. Chen, J. C. Lou, M. C. Chen, C. C. Shih, S. Y. Huang, J. H. Chen, "Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor", Appl. Phys. Lett., VOL. 104, NO. 24, 243508, JUNE (2014)
R. Zhang, K. C. Chang, T. C. Chang, T. M. Tsai, S. Y. Huang, W. J. Chen, K. H. Chen, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, H. L. Chen, S. P. Liang, Y. E. Syu, S. M. Sze, "Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory", IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 6, JUNE (2014) 630-632
C. C. Shih, K. C. Chang, T. C. Chang, T. M. Tsai, R. Zhang, J. H. Chen, K. H. Chen, T. F. Young, H. L. Chen, J. C. Lou, T. J. Chu, S. Y. Huang, D. H. Bao, S. M. Sze, "Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory", IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 6, JUNE (2014) 633-635
K. C. Chang, T. M. Tsai, T. C. Chang, K. H. Chen, R. Zhang, Z. Y. Wang, J. H Chen,T. F. Young, M. C. Chen, T. J. Chu, S. Y. Huang, Y. E. Syu, D. H. Bao, S. M. Sze, "Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory", IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 5, MAY (2014) 530-532
K. H. Liu, T. C. Chang, K. C. Chang, T. M. Tsai, T. Y. Hsieh, M. C. Chen, B. L. Yeh, W. C. Chou, "Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors", Appl. Phys. Lett., VOL. 104, NO. 10, 103501, March (2014)
T. J. Chu, T. M. Tsai, T. C. Chang, K. C. Chang, R. Zhang, K. H. Chen, J. H. Chen, T. F. Young, J. W. Huang, J. C. Lou, M. C. Chen, S. Y. Huang, H. L. Chen, Y. E. Syu, D. Bao, and S. M. Sze, "Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory", IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 2, FEBRUARY (2014)
L. Ji, Y. F. Chang, B.Fowler,Y. C. Chen, T. M. Tsai, K. C. Chang, M. C. Chen, T. C. Chang, S. M. Sze, E. T. Yu, J. C. Lee, "Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography", Nano Lett., VOL 14, NO. 2, FEBRUARY (2014) 813-818
Y. J. Chen, H. L. Chen, T. F. Young, T. C. Chang, T. M. Tsai, K. C. Chang, R. Zhang, K. H. Chen, J. C. Lou, T. J. Chu, J. H. Chen, D.H. Bao, and S. M. Sze, "Hydrogen induced redox mechanism in amorphous carbon resistive random access memory", Nanoscale Res. Lett., VOL. 9, NO. 52 ,JANUARY (2014)
C Ye, C Zhan, T. M. Tsai, K.C. Chang, M. C. Chen, T. C. Chang, T. Deng, H. Wang, " Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon"Applied Physics Express 7, 034101 (2014)
K. C. Chang, J. H. Chen, T. M. Tsai, T. C. Chang, S. Y. Huang, R. Zhang, K. H. Chen, Y. E. Syu, G. W. Chang, T. J. Chu, G. R. Liu, Y. T. Su, M. C. Chen, J. H. Pan, K. H. Liao, Y. H. Tai, T. F. Young, S. M. Sze, C. F. Ai, M. C. Wang, J. W. Huang, "Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment"J. of Supercritical Fluids 85(2014) 183–189
H. R. Chen,Y.C. Chen, T. C. Chang, K. C. Chang, T. M. Tsai, T. J. Chu, C. C. Shih, N. C. Chang, K. Y. Wang, "Surface scattering mechanisms of tantalum nitride thin film resistor", Nanoscale Res. Lett., VOL. 9, NO. 1, 177, (2014)
K. C. Chang, T. M. Tsai, R. Zhang, T. C. Chang, K. H. Chen, J. H. Chen, T. F. Young, J. C. Lou, T. J. Chu, C. C. Shih, J. H. Pan, Y. T. Su, Y. E. Syu, C. W. Tung, M. C. Chen, J. J. Wu, Y. Hu, S. M. Sze, "Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process", Appl. Phys. Lett. 103, 083509 (2013)
Y. E. Syu, T. C. Chang, J. H. Lou, T. M. Tsai, K. C. Chang, M. J. Tsai, Y. L. Wang, M. Liu, S. M. Sze, "Atomic-level quantized reaction of HfOx memristor", Appl. Phys. Lett. 102, 172903 (2013)
K. H. Chen, R. Zhang, T. C. Chang, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, C. C. Shih, C. W. Tung, Y. E. Syu, S. M. Sze, "Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices", Appl. Phys. Lett. 102, 133503 (2013)
Y. L. Yang, T. F. Young, T. C. Chang, F. Y. Shen, J. H. Hsu, T. M. Tsai, Kuan-Chang Chang, and Hisn-Lu Chen,"Mechanical stress influence on electronic transport in low-k SiOC dielectric single damascene capacitor", Appl. Phys. Lett. 102, 192912 (2013)
T. M. Tsai, K. C. Chang, R. Zhang, T. C. Chang, J. C. Lou, J. H. Chen, T. F. Young, Bae-Heng Tseng, C. C. Shih, Y. C. Pan, M. C. Chen, J. H. Pan, Y. E. Syu, S. M. Sze, "Performance and characteristics of double layer porous silicon oxide resistance random access memory", Appl. Phys. Lett. 102, 253509 (2013)
J. W. Huang, R. Zhang, T. C. Chang, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, H. L. Chen, Y. C. Pan, X. Huang, F. Zhang, Y. E. Syu, S. M. Sze, "The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory", Appl. Phys. Lett. 102, 203507 (2013)
K. C. Chang, T. M. Tsai, T. C. Chang, H. H. Wu, J. H. Chen, Y. E. Syu, G. W. Chang, T. J. Chu, Guan-Ru Liu, Y. T. Su, M. C. Chen, J. H. Pan, Jian-Yu Chen, C. W. Tung, H. C. Huang, Y. H. Tai, D. S. Gan, S. M. Sze, "Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory", IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 3, MARCH 2013
T. J. Chu, T. C. Chang, T. M. Tsai, H. H. Wu, J. H. Chen, K. C. Chang, T. F. Young, K. H. Chen, Y. E. Syu, G. W. Chang, Y. F. Chang, M. C. Chen, J. H. Lou, J. H. Pan, J. Y. Chen, Y. H. Tai, C. Ye, H. Wang, S. M. Sze, "Charge Quantity Influence on Resistance Switching Characteristic During Forming Process", IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 4, APRIL 2013
K. C. Chang, C. H. Pan, T. C. Chang, T. M. Tsai, R. Zhang, J. C. Lou, T. F. Young, J. H. Chen, C. C. Shih, T. J. Chu, J. Y. Chen, Y. T. Su, J. P. Jiang, K. H. Chen, H. C. Huang, Y. E. Syu, D. S. Gan, S. M. Sze, "Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment", IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 5, MAY 2013
K. C. Chang, T. M. Tsai, T. C. Chang, H. H. Wu, K. H. Chen, J. H. Chen, T. F. Young, T. J. Chu, J. Y. Chen, C. H. Pan, Y. T. Su, Y. E. Syu, C. W. Tung, G. W. Chang, M. C. Chen, H. C. Huang, Y. H. Tai, D. S. Gan, J. J. Wu, Y. Hu, S. M. Sze, "Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices", IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 4, APRIL 2013
K. C. Chang, R. Zhang, T. C. Chang, T. M. Tsai, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, Y. L. Yang, Y. C. Pan, G. W. Chang, T. J. Chu, C. C. Shih, J. Y. Chen, C. H. Pan, Y. T. Su, Y. E. Syu, Y. H. Tai, S. M. Sze, "Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices", IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 5, MAY 2013
M. C. Chen, T. C. Chang, Y. C. Chiu, S. C. Chen, S. Y. Huang, K. C. Chang, T. M. Tsai, K. H. Yang, S. M. Sze, M. J. Tsai, "The resistive switching characteristics in TaON films for nonvolatile memory applications", Thin Solid Films 528 (2013) 224–228
Y. E. Syu, R. Zhang, T. C. Chang, T. M. Tsai, K. C. Chang, J. C. Lou, T. F. Young, J. H. Chen, M. C. Chen, Y. L. Yang, C. C. Shih, T. J. Chu, J. Y. Chen, C. H. Pan, Y. T. Su, H. C. Huang, D. S. Gan, and S. M. Sze,
"Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device"
Y. T. Su, K. C. Chang, T. C. Chang,T. M. Tsai, R. Zhang,J. C. Lou, J. H. Chen, T. F. Young, K. H. Chen, B. H. Tseng, C. C. Shih, Y. L. Yang, M. C. Chen, T. J. Chu, C. H. Pan, Y. E. Syu, S. M. Sze, "Characteristics of hafnium oxide resistance random access memory with different setting compliance current", Appl. Phys. Lett.103, 163502 (2013)
T. M. Tsai, K. C. Chang, T. C. Chang, Y. E. Syu, S. L. Chuang, G. W. Chang, G. R. Liu, M. C. Chen, H. C. Huang, S.K. Liu, Y. H. Tai, D. S. Gan, Y. L. Yang, T. F. Young, B. H. Tseng, K. H. Chen, M. J. Tsai, C. Ye, H. Wang, S. M. Sze, "Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications", IEEE Electron Device Lett., Vol. 33, NO. 12, December 2012
T. M. Tsai, K. C. Chang, T. C. Chang, G. W. Chang, Y. E. Syu, Y. T. Su,G. R. Liu, K. H. Liao, M. C. Chen, H. C. Huang, Y. H. Tai, D. S. Gan, C. Ye, H. Wang, S. M. Sze, "Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment", IEEE Electron Device Lett., Vol. 33, NO. 12, December 2012
氧化矽基電阻式記憶體 Ting-Chang Chang ( 張鼎張)、Tsung-Ming Tsai ( 蔡宗鳴) 、 Kuan-Chang Chang ( 張冠張) 、Tian-Jian Chu ( 朱天健) 、 Yong-En Syn ( 徐詠恩) 《電子資訊》專刊
T. M. Tsai, K. C. Chang, T. C. Chang, Y. E. Syu, K. H. Liao, B. H. Tseng, S. M. Sze, "Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment",Appl. Phys. Lett., 101, 112906 (2012)
G. W. Chang, T. C. Chang, J.C Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, Y. H Tai, F. Y. Jian, Y. C. Hung, "Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors", IEEE Electron Device Lett., Vol. 33, NO. 4, April 2012
G. W. Chang, T. C. Chang, J. C. Jhu, T. M. Tsai, Y. E. Syu, K. C. Chang, Y. H. Tai, F. Y. Jian, Y. C. Hung, "Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment including thermal-induced hole trapping phenomenon under gate bias stress", Appl. Phys. Lett., 100, 182103 (2012)
Y. E. Syu, T. C. Chang, T. M. Tsai, G. W. Chang, K. C. Chang, J. H. Lou, Y. H. Tai, M. J. Tsai, Y. L. Wang, Simon M. Sze, "Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device", IEEE Electron Device Lett.,Vol. 33, NO. 3, March 2012
Y. E. Syu, T. C. Chang, T. M. Tsai, G.W. Chang, K. C. Chang, Y. H. Tai, M. J. Tsai, Y. L. Wang, S. M. Sze, "Silicon introduced effect on resistive switching characteristics of WO(X) thin films",Appl. Phys. Lett., 100, 022904 (2012)
K. C. Chang, T. M. Tsai, T. C. Chang, Y. E. Syu, C. C. Wang, S. L. Chuang, C. H. Li, D. S. Gan, S. M. Sze, "Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO(2) fluid treatment", Appl. Phys. Lett., 99, 263501 (2011)
K. C. Chang, T. M. Tsai, T. C. Chang, Y. E. Syu, S. L. Chuang, C. H. Li, D.S. Gan, S. M. Sze, "The Effect of Silicon Oxide Based RRAM with Tin Doping", J. Electrochem. Soc. , 15 (3) H65-H68 (2012)
M. C. Chen, T. C. Chang, S. Y. Huang, G. C. Chang, S. C. Chen, H. C. Huang, C. W. Hu, S. M. Sze, T. M. Tsai D. S. Gan, F. S. Yeh (Huang), M. J. Tsai, “Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide”,Electrochem. Solid-State Lett., 14 (12) H475-H477 (2011)
H. W. Li, T. C. Chang, G. W. Chang, C. S. Lin, T. M. Tsai, F. Y. Jian, Y. H. Tai, M. H. Lee, “Effect of Lateral Body Terminal on Silicon–Oxide–Nitride–Oxide–Silicon Thin-Film Transistors”, IEEE Electron Device Lett., vol. 32, no. 10, oct. 2011
G. W. Chang, T. C. Chang, Y. E. Syu, T. M. Tsai, K. C. Chang, C. H. Tu, F. Y. Jian, Y. C. Hung, Y. H. Tai, “Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors” Thin Solid Films 520 (2011) 1608–1611
Y. E. Syu, T. C. Chang, C. T. Tsai, G. W. Chang, T. M. Tsai, K. C. Chang, Y. H. Tai,M. J. Tsai, S. M. Sze, “Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications”, Electrochem. Solid-State Lett., 14, H419 (2011).
C. H. Dai, T. C. Chang, A. K. Chu, Y. J. Kuo, Y. C. Hung, W. H. Lo, S. H. Ho, C. E. Chen, J. M. Shih, W. L. Chung, H. M. Chen, B. S. Dai, T. M. Tsai, G. Xia, O. Cheng, C. T. Huang, “Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacks” Thin Solid Films 520 (2011) 1511–1515
K. C. Chang, T. M. Tsai, T. C. Chang, Y. E. Syu, H. C. Huang, Y. C. Hung, T. F. Young, D. S. Gan, N. J. Ho, “Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment”, Electrochem. Solid-State Lett., 14 (9) K47-K50 (2011)
Y. E. Syu, T. C. Chang, T. M. Tsai, Y. C. Hung, K. C. Chang, M. J. Tsai, M. J. Kao, S. M. Sze, “Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOX/TiN Structure”, IEEE Electron Device Lett., vol 32, no. 4, april 2011
T. C. Chang, T. M. Tsai, P. T. Liu, C. W. Chen, T. Y. Tseng, “ Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material”, Thin Solid Film, vol. 469, pp. 383-387, 2004.
T. C. Chang, T. M. Tsai, P. T. Liu, C. W. Chen, S. T. Yan, H. Aoki, Y. C. Chang, T. Y. Tseng, “CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications, Electrochem. Solid- state Lett., vol. 7 (6), pp. G122-G124, 2004.
T. C. Chang, T. M. Tsai, P. T. Liu, S. T. Yan, Y. C. Chang, H. Aoki, S. M. Sze, T. Y. Tseng, “Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application”, J. Vac. Sci.,Technol. B., vol. 22 (3), pp. 1196-1201, 2004.
T. C. Chang, T. M. Tsai, P. T. Liu, C. W. Chen, S. T. Yan, H. Aoki, Y. C. Chang, T. Y. Tseng, “CMP of Ultra Low-k Material Porous-Polysilazane (PPSZ) for Interconnect Applications”, Thin Solid Film, vol. 447, pp. 524-530, 2004.
“Direct Patterning of Low-k Hydrogen Silsesquioxane Using X-ray Exposure Technology”, T. C. Chang, T. M. Tsai, P. T. Liu, Y. S. Mor, C. W. Chen, J. T. Sheu, T. Y. Tseng, Electrochem. Solid-state Lett., 6 (5), G69 (2003).

K. C. Chang, R. Zhang, T. C. Chang, T. M. Tsai, T. J. Chu, H. L. Chen, C. C. Shih, C. H. Pan, Y. T. Su, P. J. Wu and Simon M. Sze, "High Performance, Excellent Reliability Multifunctional Graphene Oxide Doped Memristor Achieved by Self-protective Compliance Current Structure", 2014 IEEE International Electron Devices Meeting(IEDM), San Francisco, CA, USA, December 15-17, 2014
T. M. Tsai, K. C. Chang, T. C. Chang, G. R. Liu, J. P. Jiang, and Simon M. Sze, "Resistive switching characteristics of silicon oxide based RRAM with titanium doping ", International Conference on Metallurgical Coatings and Thin Films(ICMCTF), San Diego, CA, USA, April 28-May 2, 2014
T. M. Tsai, K. C. Chang, T. C. Chang, G. R. Liu, J. P. Jiang, and Simon M. Sze, "Influence of supercritical CO2 fluid treatment on resistive switching behaviors of Ti-doped SiO2 thin film ", International Conference on Metallurgical Coatings and Thin Films(ICMCTF), San Diego, CA, USA, April 28-May 2, 2014
K. C. Chang, T. M. Tsai, T. C. Chang, G.-R. Liu, H. C. Huang, T. F. Young, D. S. Gan, "Characterization of ZnO Nanotubes grown by Supercritical CO2 Fluid mixed with ethanol solution", International Conference on Metallurgical Coatings and Thin Films(ICMCTF), San Diego, CA, USA, April 28-May 2, 2014
K. C. Chang, T. M. Tsai, T. C. Chang, G. R. Liu, Y. C. Pan, and Simon M. Sze, "Bipolar resistive switching in Zr-doped SiO2 for RRAM applications ", International Conference on Metallurgical Coatings and Thin Films(ICMCTF), San Diego, CA, USA, April 28-May 2, 2014
T. M. Tsai, C. H. Li, T. C. Chang, K. C. Chang, T. F. Young, Y. E. Syu, "Growth of ZnO Nanotubes by Supercritical CO2 Fluid Mixed with Ethanol and Water " TACT 2011 International Thin Film Conference, Howard Beach Resort, Kenting, Taiwan, 2011
T. M. Tsai, K. C. Chang, T. C. Chang, Y. E. Syu, S. L. Chuang, S. K. Liu ,"Bipolar Resistive Switching in Ni-doped SiO2 for RRAM Applications ", TACT 2011 International Thin Film Conference, Howard Beach Resort, Kenting, Taiwan, 2011

年度	獎項名稱	頒獎單位
101	中山大學年輕學者獎	國立中山大學
98	工學院優良教師獎	國立中山大學工學院