<Abstrate>

Hysteresis, which is induced by both extrinsic and intrinsic causes, is often observed in

molybdenum disulphide (MoS2) field-effect transistors(FETs), and several extrinsic 

hysteresis effects have been reported in unpassivated bottom-gate MoS2 device 

structures. In this study, interface-trap-inducedhysteresis and other electrical properties

are examined. We experimentally investigate thermally activated trap charges near a

silicon-dioxide (SiO2)-MoS2interface that gives rise to hysteresis in amultilayer MoS2FET 

in a temperature region of 10–300 K. The threshold voltage (VTH) and field-effectmobility

 (μFE) decrease with the increase in temperature, regardless of the gate-bias sweep direction.

The hysteresis that coincides with the trend of subthreshold swing increases sharply above

T = 150 K as the released charges from interface traps become dominant over the fixed charges.

Based on a temperature-dependent hysteresis analysis, we discussed the activation energy of

 interface traps and maximum interface trap density of the fabricated multilayer MoS2FET.

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