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Near-infrared nanowire lasers are promising as ultrasmall, low-consumption

light emitters in on-chip optical communications and computing systems.

Here, we report on a room-temperature near-infrared nanolaser based on an

AlGaAs/GaAs nanowire/single-quantum-well heterostructure grown by

Au-catalyzed metal organic chemical vapor deposition. When subjects to pulsed

optical excitation, the nanowire exhibits lasing, with a low threshold of

600 W/cm2, a narrow linewidth of 0.39 nm, and a high Q factor of 2000 at

low temperature. Lasing is observed up to 300 K, with an ultrasmall temperature 

dependent wavelength shift of 0.045 nm/K. This work paves the way towards

ultrasmall, low-consumption, and high-temperature-stability near-infrared nanolasers.

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