<Abstrate>

We grew and characterized Bi1-xSbx thin films on GaAs(111)A substrates

by molecular beam epitaxy. By optimizing the growth condition, we were

able to grow Bi1-xSbx thin films epitaxially with the Sb concentration

ranging from 0% to 100% and the epitaxial orientation of

Bi1-xSbx(001)//GaAs(111). The conductivity of Bi1-xSbx exceeds

105 Ω−1 m−1 and approaches those of bulk values for thick enough thin

films, which are higher than those of other Bi-based topological insulators

by at least an order of magnitude. From the temperature dependence of

their electrical conductivity, we confirmed the existence of metallic surface

states of Bi1-xSbxinside and outside of the topological insulating region.

Our results demonstrate the potential of Bi1-xSbx as a spin Hall material

with high conductivity and possibly large spin Hall angle for

spintronic applications.
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