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The synthesis, crystal growth, and structural and optoelectronic characterization has been

carried out for the perovskite compound CsPbBr3. This compound is a direct band gap

semiconductor which meets most of the requirements for successful detection of X- and γ-ray

radiation, such as high attenuation, high resistivity, and significant photoconductivity response,

with detector resolution comparable to that of commercial, state-of-the-art materials. A structural

phase transition which occurs during crystal growth at higher temperature does not seem to affect

its crystal quality. Its μτ product for both hole and electron carriers is approximately equal. The μτ

product for electrons is comparable to cadmium zinc telluride (CZT) and that for holes is 10 times

higher than CZT.

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