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We report on the electrical and optical properties of ITO and AZO films fabricated directly on

silicon substrates under several growth and annealing temperatures. We use broadband

spectroscopic ellipsometry measurements (from 300 nm to 20 μm) to obtain a consistent

model for the permittivity of each of the films. The results are then used to design an

optimized, single layer, high transparency, high conductivity film, suitable as front transparent

electrode and low thermal emissivity coating for silicon based solar cells. The best

performance is found using the properties of the ITO film grown at 250 °C, with a state

of the art resistivity of 0.2 mΩ cm and an optimized thickness of 75 nm which leads to 0.79

average absorptivity in the solar range (300–2000 nm) and 0.21 average emissivity in the

thermal range (5–20 μm). The structural characterization of the films using X-Ray

diffraction, and the Hall mobility and resistivity measurements of all the films are also

provided, complementing and supporting the observed optical properties.
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